GLA14

ISSUED DATE :2002/10/28 www.DataSheet4U.com REVISED DATE :2006/05/10C G L A1 4 Description NPN EPITAXIAL PLANAR T RANSISTOR The GLA14 is a Darlington amplifier transistor designed for applications requiring extremely high current gain. Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD unless otherwise noted) Max. Unit 100 100 1.5 2.0 6 MHz pF V V V nA nA V V IC=100uA, IE=0 IC=100uA, IB=0 IE=10uA, IC=0 VCB=30V, IE=0 VEB=10V, IC=0 IC=100mA, IB=0.1mA VCE=5V, IC=100mA VCE=5V, IC=10mA VCE=5V, IC=100mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Ratings +150 -55~+150 30 30 10 500 2 Unit V V V mA W Electrical Characteristics (Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. 30 30 10 10K 20K 125 Typ. - Test Conditions GLA14 Page: 1/2 ISSUED DATE :2002/10/28 www.DataSheet4U.com REVISED DATE :2006/05/10C Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM r...