N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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GM3055
Description
1/6 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
The SOT-89 package is universally ...
Description
www.DataSheet4U.com
GM3055
Description
1/6 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
The SOT-89 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Package Dimensions SOT-89
REF. A B C D E F
Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20
REF. G H I J K L M
Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF.
Absolute Maximum Ratings at Ta = 25
Parameter Operating Junction Temperature Range Storage Temperature Range Drain - Source Voltage Gate - Source Voltage Continuous Drain Current ,VGS@10V Continuous Drain Current ,VGS@10V Pulsed Drain Current
1
Symbol Tj Tstg VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25
Ratings -55 ~+150 -55 ~ +150 30 ±20 15 9 50 15
Unit
V V A A A W
Total Power Dissipation
Thermal Data
Symbol Rthj-case Rthj-amb parameter Thermal Resistance junction-case Thermal Resistance junction-ambient Max. Max. Value 3 42 Unit /W /W
Source –Drain Diode
Symbol Is ISM VsD Parameter Continuous source Current (Body Diode) Pulsed Source Current(Body Diode) Forward On Voltage
2 1
Test Conditions VD=VG=0V, VS=1.3V Tj=25 ,Is=15A,V GS=0V
Min. -
Typ. -
Max. 15 50 1.3
Units A A V
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Notes:
1. 2. Pulse width limited by safe operating area. Pulse width 300us, duty cycle 2%.
Electrical Characteristics @Tj = 25
Symbol BVDss Parameter Drain – Source Breakdown Voltage
(unless o...
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