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GM3055 Dataheets PDF



Part Number GM3055
Manufacturers GTM CORPORATION
Logo GTM CORPORATION
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet GM3055 DatasheetGM3055 Datasheet (PDF)

www.DataSheet4U.com GM3055 Description 1/6 N-CHANNEL ENHANCEMENT MODE POWER MOSFET The SOT-89 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Max.

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www.DataSheet4U.com GM3055 Description 1/6 N-CHANNEL ENHANCEMENT MODE POWER MOSFET The SOT-89 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Operating Junction Temperature Range Storage Temperature Range Drain - Source Voltage Gate - Source Voltage Continuous Drain Current ,VGS@10V Continuous Drain Current ,VGS@10V Pulsed Drain Current 1 Symbol Tj Tstg VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 Ratings -55 ~+150 -55 ~ +150 30 ±20 15 9 50 15 Unit V V A A A W Total Power Dissipation Thermal Data Symbol Rthj-case Rthj-amb parameter Thermal Resistance junction-case Thermal Resistance junction-ambient Max. Max. Value 3 42 Unit /W /W Source –Drain Diode Symbol Is ISM VsD Parameter Continuous source Current (Body Diode) Pulsed Source Current(Body Diode) Forward On Voltage 2 1 Test Conditions VD=VG=0V, VS=1.3V Tj=25 ,Is=15A,V GS=0V Min. - Typ. - Max. 15 50 1.3 Units A A V www.DataSheet4U.com 2/6 Notes: 1. 2. Pulse width limited by safe operating area. Pulse width 300us, duty cycle 2%. Electrical Characteristics @Tj = 25 Symbol BVDss Parameter Drain – Source Breakdown Voltage (unless otherwise specified) Test Conditions VGS=0V, ID=250uA Reference to 25 VGS=10V,ID=8A VGS=4.5V,ID=6A , ID=1mA Min. 30 1 Typ. 0.037 5.4 1.3 3.6 3.6 19.8 13 3.2 260 144 13 Max. 80 100 3 25 250 ±100 Unit V V/ m m V uA uA nA nC nC nC nS nS nS nS pf pf pf BVDSS/ Tj Breakdown Voltage Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Drain-Source Leakage Current(Tj=25 ) VDS=VGS, ID=250uA VDS=30V,V GS=0V VDS=24V,V GS=0V VGS=±20V ID=8A VDS=24V VGS=5V VDS=15V ID=8A RG=3.4 ,V GS=10V RD=1.9 VGS=0V VDS=25V f=1.0MHZ Drain-Source Leakage Current(Tj=150 ) Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain (“Miller)Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 www.DataSheet4U.com 3/6 Characteristics Curve www.DataSheet4U.com 4/6 www.DataSheet4U.com 5/6 www.DataSheet4U.com 6/6 Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Ch.


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