AOP601

www.DataSheet4U.com AOP601 Complementary Enhancement Mode Field Effect Transistor General Description The AOP601 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses. Standard Product AOP601 is Pb-free (meets ROHS & Sony 259 specifications). AOP601L is a Green Product ordering option. AOP601 and AOP601L are electrically identical. Features n-channel p-channel -30V VDS (V) = 30V ID = 7.5A (VGS = 10V) -6.6A RDS(ON) < 28m Ω < 35m Ω (VGS = -10V) < 43m Ω < 58m Ω (VGS = -4.5V) Schottky VDS=30V, I F=3A, VF<0.5V@1A PDIP-8 S2 G2 S1/A G1 1 2 3 4 8 7 6 5 D2 D2 D1/K D1/K D2 D1 K P-ch N-ch G2 S2 G1 S1 A Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -30 ±20 -6.6 -5.3 -30 2.5 1.6 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG Symbol VDS TA=25°C ID IDM PD TJ, TSTG 7.5 6 30 2.5 1.6 -55 to 150 W °C Units V A Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward Current A Maximum Schottky 30 4 2.7 20 2.5 1.6 -55 to 150 TA=70°C Pulsed Forward Current B TA=25°C Power Dissipation A TA=70°C W °C Junction and Storage Temperature Range ...