DatasheetsPDF.com

4435BZ

Fairchild Semiconductor
Part Number 4435BZ
Manufacturer Fairchild Semiconductor
Description FDS4435BZ
Published Feb 18, 2010
Detailed Description FDS4435BZ P-Channel PowerTrench® MOSFET com June 2007 FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -...
Datasheet PDF File 4435BZ PDF File

4435BZ
4435BZ

Overview
FDS4435BZ P-Channel PowerTrench® MOSFET com June 2007 FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.
8A, 20mΩ Features „ Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.
8A „ Max rDS(on) = 35mΩ at VGS = -4.
5V, ID = -6.
7A „ Extended VGSS range (-25V) for battery applications „ HBM ESD protection level of ±3.
8KV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ Termination is Lead-free and RoHS compliant General Description This P-Channel MOSFET is produced ® using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This devi...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)