RJH60F4DPK

RJH60F4DPK Silicon N Channel IGBT High Speed Power Switching Features High speed switching Low on-state voltage Fast recovery diode www.DataSheet4U.com Preliminary REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW ≤ 5 μs, duty cycle ≤ 1% Symbol VCES VGES IC Note1 IC Note1 ic(peak) Note1 iDF(peak) Note2 PC θj-c Tj Tstg Ratings 600 ±30 60 30 120 100 235.8 0.53 150 –55 to +150 Unit V V A A A A W °C/W °C °C REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 1 of 6 RJH60F4DPK Preliminary www.DataSheet4U.com Electrical Characteristics Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF1 VECF2 trr Min ⎯ ⎯ 4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ 1.4 1.7 1945 93 33 30 32 65 80 1.6 1.8 140 Max 100 ±1 8 1.82 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2.1 ⎯ ⎯ Unit μA μA V V V pF ...