RJH60F0DPK

RJH60F0DPK Silicon N Channel IGBT High Speed Power Switching Features High speed switching Low on-state voltage Fast recovery diode www.DataSheet4U.com Preliminary REJ03G1834-0100 Rev.1.00 Oct 13, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100°C Collector peak current Collector to emitter diode forward peak current Collector dissipation Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW ≤ 5 μs, duty cycle ≤ 1% 3. Value at Tc = 25°C Symbol VCES VGES IC Note1 IC Note1 ic(peak) Note1 iDF(peak) Note2 PC Note3 Tj Tstg Ratings 600 ±30 50 25 100 100 201.6 150 –55 to +150 Unit V V A A A A W °C °C REJ03G1834-0100 Rev.1.00 Oct 13, 2009 Page 1 of 3 RJH60F0DPK Preliminary www.DataSheet4U.com Electrical Characteristics Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Switching time Symbol ICES IGES VGE(off) VCE(sat) tf Min — — 4 — — — Typ — — — 1.4 1.7 90 Max 100 ±1 8 1.82 — — Unit μA μA V V V ns (Tj = 25°C) Test Conditions VCE = 600V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10V, IC = 1 mA IC = 25 A, VGE = 15V Note4 IC = 50 A, VGE = 15V Note4 IC = 30 A, Resistive Load VCC = 300 V VGE = 15 V Note4 Rg = 5 Ω IF = 20 A...