DatasheetsPDF.com

RJH60D2DPP-M0 Dataheets PDF



Part Number RJH60D2DPP-M0
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel IGBT
Datasheet RJH60D2DPP-M0 DatasheetRJH60D2DPP-M0 Datasheet (PDF)

RJH60D2DPP-M0 Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Preliminary REJ03G1841-0100 Rev.1.00 Oct 14, 2009 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C G 1. Gate 2. Collector 3. Emitter 1 2 3 E Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current .

  RJH60D2DPP-M0   RJH60D2DPP-M0



Document
RJH60D2DPP-M0 Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Preliminary REJ03G1841-0100 Rev.1.00 Oct 14, 2009 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C G 1. Gate 2. Collector 3. Emitter 1 2 3 E Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iDF(peak) Note1 PC Note2 θj-c Note2 Tj Tstg Ratings 600 ±30 20 10 40 10 40 22.5 5.5 150 –55 to +150 Unit V V A A A A A W °C/ W °C °C REJ03G1841-0100 Rev.1.00 Oct 14, 2009 Page 1 of 3 RJH60D2DPP-M0 Preliminary www.DataSheet4U.com Electrical Characteristics Item Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Symbol ICES / IR IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf VF trr Min — — 4.0 — — — — — — — — — — — — — — Typ — — — 1.6 1.8 430 35 15 19.1 3.0 9.0 30 30 50 90 1.8 100 Max 100 ±1 6.0 2.2 — — — — — — — — — — — 2.3 — Unit μA μA V V V pF pF pF nC nC nC ns ns ns ns V ns (Ta = 25°C) Test Conditions VCE = 600 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 10 A, VGE = 15 V Note3 IC = 20 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 10A IC = 10 A RL = 30 Ω VGE = 15 V Rg = 5 Ω IF = 10 A Note3 IF = 10 A diF/dt = 100 A/μs FRD Forward voltage FRD reverse recovery time Notes: 3. Pulse test. 4. Under development — The specifications potentially be changed without notice. REJ03G1841-0100 Rev.1.00 Oct 14, 2009 Page 2 of 3 RJH60D2DPP-M0 Preliminary www.DataSheet4U.com RENESAS Code PRSS0003AF-A Previous Code TO-220FL MASS[Typ.] 1.5g Package Dimension Package Name TO-220FL JEITA Package Code ⎯ Unit: mm 10.0 ± 0.3 2.8 ± 0.2 3.0 ± 0.3 15.0 ± 0.3 φ 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 6.5 ± 0.3 Ordering Information Part No. RJH60D2DPP-M0-T2 Quantity 1050 pcs Box (Tube) Shipping Container REJ03G1841-0100 Rev.1.00 Oct 14, 2009 Page 3 of 3 2.6 ± 0.2 4.5 ± 0.2 www.DataSheet4U.com Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or represen.


RJH60D2DPE RJH60D2DPP-M0 RJH60D3DPE


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)