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RJH60D1DPP-M0 Dataheets PDF



Part Number RJH60D1DPP-M0
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N-Channel IGBT
Datasheet RJH60D1DPP-M0 DatasheetRJH60D1DPP-M0 Datasheet (PDF)

RJH60D1DPP-M0 Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Preliminary REJ03G1839-0100 Rev.1.00 Oct 14, 2009 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C G 1. Gate 2. Collector 3. Emitter 1 2 3 E Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current .

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RJH60D1DPP-M0 Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Preliminary REJ03G1839-0100 Rev.1.00 Oct 14, 2009 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C G 1. Gate 2. Collector 3. Emitter 1 2 3 E Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iD(peak) Note1 PC Note2 θj-c Note2 Tj Tstg Ratings 600 ±30 16 8 32 8 32 20 6.25 150 –55 to +150 Unit V V A A A A A W °C/ W °C °C REJ03G1839-0100 Rev.1.00 Oct 14, 2009 Page 1 of 3 RJH60D1DPP-M0 Preliminary www.DataSheet4U.com Electrical Characteristics Item Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Symbol ICES / IR IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf VF trr Min — — 4.0 — — — — — — — — — — — — — — Typ — — — 1.8 2.3 290 25 7.5 12.0 2.0 6.0 25 35 40 100 1.8 100 Max 100 ±1 6.0 2.2 — — — — — — — — — — — 2.3 — Unit μA μA V V V pF pF pF nC nC nC ns ns ns ns V ns (Ta = 25°C) Test Conditions VCE = 600 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 8 A, VGE = 15 V Note3 IC =16 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 8 A IC = 8 A RL = 37.5 Ω VGE = 15 V Rg = 5 Ω IF = 8 A Note3 IF = 8 A diF/dt = 100 A/μs FRD Forward voltage FRD reverse recovery time Notes: 3. Pulse test. 4. Under development -The specifications potentially be changed without notice. REJ03G1839-0100 Rev.1.00 Oct 14, 2009 Page 2 of 3 RJH60D1DPP-M0 Preliminary www.DataSheet4U.com RENESAS Code PRSS0003AF-A Previous Code TO-220FL MASS[Typ.] 1.5g Package Dimension Package Name TO-220FL JEITA Package Code ⎯ Unit: mm 10.0 ± 0.3 2.8 ± 0.2 3.0 ± 0.3 15.0 ± 0.3 φ 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 6.5 ± 0.3 Ordering Information Part No. RJH60D1DPP-M0-T2 Quantity 1050 pcs Box (Tube) Shipping Container REJ03G1839-0100 Rev.1.00 Oct 14, 2009 Page 3 of 3 2.6 ± 0.2 4.5 ± 0.2 www.DataSheet4U.com Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended ap.


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