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MHW10188AN Dataheets PDF



Part Number MHW10188AN
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description Gallium Arsenide CATV Amplifier Module
Datasheet MHW10188AN DatasheetMHW10188AN Datasheet (PDF)

Freescale Semiconductor Technical Data Document Number: MHW10188AN Rev. 0, 11/2006 Gallium Arsenide CATV Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection • GaAs FET Transistor Technology • Unconditionally Stable Under All Load Conditions • Output Port Ring Wave Protection Applications • CATV Systems Operating in the 40 to 1000 MHz Frequency Range • Output Stage Ampl.

  MHW10188AN   MHW10188AN



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Freescale Semiconductor Technical Data Document Number: MHW10188AN Rev. 0, 11/2006 Gallium Arsenide CATV Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection • GaAs FET Transistor Technology • Unconditionally Stable Under All Load Conditions • Output Port Ring Wave Protection Applications • CATV Systems Operating in the 40 to 1000 MHz Frequency Range • Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems • Driver Amplifier in Linear General Purpose Applications Description www.DataSheet4U.com • 24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Power Doubler Amplifier Module • RoHS Compliant Table 1. Maximum Ratings Rating RF Voltage Input (Single Tone) DC Supply Voltage Operating Case Temperature Range Storage Temperature Range Symbol Vin VCC TC Tstg MHW10188AN 1000 MHz 21 dB GAIN 132 - CHANNEL GaAs CATV AMPLIFIER MODULE CASE 1302 - 01, STYLE 1 Value +75 +26 - 20 to +100 - 40 to +100 Unit dBmV Vdc °C °C Table 2. ESD Maximum Ratings Rating Surge Voltage per IEC 1000 - 4 - 5 Human Body Model per Mil. Std. 1686 Input Value 300 2 Output Value 300 2 Unit V kV Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +45°C, 75 Ω system unless otherwise noted) Characteristic Frequency Range Power Gain Slope 1000 MHz 40 - 1000 MHz Symbol BW Gp S GF IRL 40 - 180 MHz 181 - 300 MHz 301 - 450 MHz 451 - 870 MHz 871 - 1000 MHz ORL 40 - 180 MHz 181 - 300 MHz 301 - 450 MHz 451 - 870 MHz 871 - 1000 MHz 20 19 18 17 16 — — — — — — — — — — 20 19 18 17 16 — — — — — — — — — — dB Min 40 20 0.2 — Typ — 21 1 — Max 1000 22 1.8 0.8 Unit MHz dB dB dB dB Gain Flatness (40 - 1000 MHz, Peak - to - Valley) Return Loss — Input (Zo = 75 Ohms) Return Loss — Output (Zo = 75 Ohms) © Freescale Semiconductor, Inc., 2006. All rights reserved. MHW10188AN 1 RF Device Data Freescale Semiconductor Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +45°C, 75 Ω system unless otherwise noted) (continued) Characteristic Composite Second Order (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) Cross Modulation Distortion @ Ch 2 (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) (Vout = +58 dBmV @ 870 MHz Equiv) Composite Triple Beat www.DataSheet4U.com (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 dBmV @ 870 MHz Equiv) (Vout = +56 .


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