LET9120M
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
Preliminary data
Feat...
LET9120M
RF power
transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
Preliminary data
Features
■ ■ ■ ■ ■
Excellent thermal stability Common source configuration push-pull POUT = 120 W with 18 dB gain @ 860 MHz Internal input matching BeO-free package
Description
The LET9120M is a common source n-channel enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.
M252 Epoxy sealed
Figure 1.
Pin connection
1
2
3 5
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4
1. Drain 2. Drain 3. Source
4. Gate 5. Gate
Table 1.
Device summary
Order code LET9120M Package M252 Branding LET9120M
November 2009
Doc ID 16762 Rev 1
1/8
www.st.com 8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Contents
LET9120M
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 1.2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Dynamic . . . . . . . ...
