MRF8S9260HSR3

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.  BITDyaQpni=dcwa1li7dS0tihn0g=mle3A--.,8CP4aorMuritHe=rzW,7I5n--pWCuDattMStsiAgAnPvaeglr.P,foAIQrRmMa=na7cg.en5:itdVuBdDeD@C=0l2ip.80p1iVn%ogl,tPsCr,ohbaanbnielitly on CCDF. Frequency Gps (dB) D Output PAR ACPR (%) (dB) (dBc) 920 MHz 18.8 36.0 6.3 --39.5 940 MHz 18.7 37.0 6.2 --38.6 960 MHz 18.6 38.5 5.9 --37.1  Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW (1) Output Power (3 dB Input Enhanced Ruggedness Overdrive from Rated Pout), Designed for  Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW Features  100% PAR Tested for Guaranteed Output Power Capability  Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters  Internally Matched for Ease of Use  Integrated ESD Protection  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Optimized for Doherty Applications  In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRF8S9260H Rev. 1, 2/2012 MRF8S9260HR3 MRF8S9260HSR3 920--960 MHz, 75 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 465B--04 NI--880 MRF8S9260HR3 CASE 465C--03 NI--880S MRF8S9...