MRF8S9220HR3

Freescale Semiconductor Technical Data Document Number: MRF8S9220H Rev. 0, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 65 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.7 19.8 19.4 hD (%) 35.1 35.3 35.7 Output PAR (dB) 6.1 6.2 6.1 ACPR (dBc) - 37.4 - 37.5 - 37.4 MRF8S9220HR3 MRF8S9220HSR3 920 - 960 MHz, 65 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 317 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Typical Pout @ 1 dB Compression Point ] 220 Watts CW Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate - Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 ...