Document
Bulletin I27136 rev. E 10/02
IRKU/V105 SERIES
THYRISTOR/ THYRISTOR ADD-A-pakTM GEN V Power Modules
Features
High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage
Benefits
Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded
105 A
Mechanical Description
The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pullout: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules.
Electrical Description
These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger.
www.DataSheet4U.com
Major Ratings and Characteristics
Parameters
IT(AV) @ 85°C IT(RMS) ITSM @ 50Hz @ 60Hz I t
2
IRKU/V105
105 165 1785 1870 15.91 14.52 159.1 400 to 1600 - 40 to 125 - 40 to130
Units
A A A A KA 2s KA 2s KA 2√s V
o
@ 50Hz @ 60Hz
I 2√ t VRRM range TSTG TJ
C C
o
www.irf.com
1
IRKU/V105 Series
Bulletin I27136 rev. E 10/02
ELECTRICAL SPECIFICATIONS Voltage Ratings
Type number Voltage Code 04 IRKU/V105 08 12 16
VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V V V
400 800 1200 1600 500 900 1300 1700 400 800 1200 1600
IRRM IDRM 130°C mA
20
On-state Conduction
Parameters
IT(AV) Max. average on-state current IT(RMS) Max. RMS on-state current. ITSM @ TC Max. peak, one cycle non-repetitive on-state current
IRKU/V105
105 165 77 1785 1870 1500 1570 2000 2100
Units
Conditions
180o conduction, half sine wave,
A °C
TC = 85oC DC t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms No voltage reapplied 100% VRRM reapplied TJ = 25oC, no voltage reapplied No voltage reapplied 100% VRRM reapplied TJ = 25oC, no voltage reapplied Initial TJ = TJ max.
Sinusoidal half wave, Initial TJ = TJ max.
A
I2t
Max. I2t for fusing
15.91 14.52 11.25 10.27 20.00 18.30 KA s
2
www.DataSheet4U.com 2
I √t
Max. I2√ t for fusing (1) voltage (2)
159.1 0.80 0.85 2.37 2.25 1.64
K A2√s V mΩ
t= 0.1 to 10ms, no voltage reappl., TJ =TJ max. Low level (3) High level (4) Low level (3) High level (4) ITM = π x IT(AV) IFM = π x IF(AV) T J = 25oC, from 0.67 VDRM, TJ = TJ max TJ = TJ max TJ = 25°C
VT(TO) Max. value of threshold rt VTM di/dt Max. value of on-state slope resistance (2) Max. peak on-state voltage Max. non-repetitive rate of rise of turned on current IH IL Max. holding current Max. latching current
V
150 200
A/µs
ITM =π x IT(AV), I = 500mA,
g
tr < 0.5 µs, t p > 6 µs TJ = 25oC, anode supply = 6V, mA 400 resistive load, gate open circuit TJ = 25oC, anode supply = 6V,resistive load
(1) I2t for time t = I2√t x √t . x x (3) 16.7% x π x IAV < I < π x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (4) I > π x IAV
2
www.irf.com
IRKU/V105 Series
Bulletin I27136 rev. E 10/02
Triggering
Parameters
PGM IGM VGT Max. peak gate power
IRK.U/V105
12 3 3 10 4.0 2.5 1.7 270 150 80 0.25 6
Units
W A
Conditions
PG(AV) Max. average gate power Max. peak gate current -VGM Max. peak negative gate voltage Max. gate voltage required to trigger IGT Max. gate current required to trigger Max. gate voltage that will not trigger IGD Max. gate current that will not trigger
V
TJ = - 40°C TJ = 25°C TJ = 125°C TJ = - 40°C TJ = 25°C TJ = 125°C TJ = 125 C, rated VDRM applied TJ = 125oC, rated VDRM applied
o
Anode supply = 6V resistive load Anode supply = 6V resistive load
mA
VGD
V mA
Blocking
Parameters
IRRM IDRM VINS Max. peak reverse and off-state leakage current at VRRM, VDRM RMS isolation voltage 2500 (1 min) V 3500 (1 sec) dv/dt Max. critical rate of rise of off-state voltage (5) 500 V/µs shorted TJ = 130oC, linear to 0.67 VDRM, gate open circuit 50 Hz, circuit to base, all terminals 20 mA TJ = 130oC, gate open circuit
IRKU/V 105
Units
Conditions
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKU105/16AS90.
Thermal and Mechanical Specifications
Parameters
TJ www.DataSheet4U.com Tstg Junction operating temperature range Storage temperature range
IRKU/V105
- 40 to 130 - 40 to 125 0.135
Units
Conditions
°C Per module, DC operation K/W Mounting surface flat, smooth and greased
A m.