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IRKV105 Dataheets PDF



Part Number IRKV105
Manufacturers International Rectifier
Logo International Rectifier
Description ADD-A-pak GEN V Power Modules THYRISTOR
Datasheet IRKV105 DatasheetIRKV105 Datasheet (PDF)

Bulletin I27136 rev. E 10/02 IRKU/V105 SERIES THYRISTOR/ THYRISTOR ADD-A-pakTM GEN V Power Modules Features High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage Benefits Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded 105 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal perfo.

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Bulletin I27136 rev. E 10/02 IRKU/V105 SERIES THYRISTOR/ THYRISTOR ADD-A-pakTM GEN V Power Modules Features High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage Benefits Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded 105 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pullout: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Electrical Description These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. www.DataSheet4U.com Major Ratings and Characteristics Parameters IT(AV) @ 85°C IT(RMS) ITSM @ 50Hz @ 60Hz I t 2 IRKU/V105 105 165 1785 1870 15.91 14.52 159.1 400 to 1600 - 40 to 125 - 40 to130 Units A A A A KA 2s KA 2s KA 2√s V o @ 50Hz @ 60Hz I 2√ t VRRM range TSTG TJ C C o www.irf.com 1 IRKU/V105 Series Bulletin I27136 rev. E 10/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code 04 IRKU/V105 08 12 16 VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V V V 400 800 1200 1600 500 900 1300 1700 400 800 1200 1600 IRRM IDRM 130°C mA 20 On-state Conduction Parameters IT(AV) Max. average on-state current IT(RMS) Max. RMS on-state current. ITSM @ TC Max. peak, one cycle non-repetitive on-state current IRKU/V105 105 165 77 1785 1870 1500 1570 2000 2100 Units Conditions 180o conduction, half sine wave, A °C TC = 85oC DC t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms t=10ms t=8.3ms No voltage reapplied 100% VRRM reapplied TJ = 25oC, no voltage reapplied No voltage reapplied 100% VRRM reapplied TJ = 25oC, no voltage reapplied Initial TJ = TJ max. Sinusoidal half wave, Initial TJ = TJ max. A I2t Max. I2t for fusing 15.91 14.52 11.25 10.27 20.00 18.30 KA s 2 www.DataSheet4U.com 2 I √t Max. I2√ t for fusing (1) voltage (2) 159.1 0.80 0.85 2.37 2.25 1.64 K A2√s V mΩ t= 0.1 to 10ms, no voltage reappl., TJ =TJ max. Low level (3) High level (4) Low level (3) High level (4) ITM = π x IT(AV) IFM = π x IF(AV) T J = 25oC, from 0.67 VDRM, TJ = TJ max TJ = TJ max TJ = 25°C VT(TO) Max. value of threshold rt VTM di/dt Max. value of on-state slope resistance (2) Max. peak on-state voltage Max. non-repetitive rate of rise of turned on current IH IL Max. holding current Max. latching current V 150 200 A/µs ITM =π x IT(AV), I = 500mA, g tr < 0.5 µs, t p > 6 µs TJ = 25oC, anode supply = 6V, mA 400 resistive load, gate open circuit TJ = 25oC, anode supply = 6V,resistive load (1) I2t for time t = I2√t x √t . x x (3) 16.7% x π x IAV < I < π x IAV (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (4) I > π x IAV 2 www.irf.com IRKU/V105 Series Bulletin I27136 rev. E 10/02 Triggering Parameters PGM IGM VGT Max. peak gate power IRK.U/V105 12 3 3 10 4.0 2.5 1.7 270 150 80 0.25 6 Units W A Conditions PG(AV) Max. average gate power Max. peak gate current -VGM Max. peak negative gate voltage Max. gate voltage required to trigger IGT Max. gate current required to trigger Max. gate voltage that will not trigger IGD Max. gate current that will not trigger V TJ = - 40°C TJ = 25°C TJ = 125°C TJ = - 40°C TJ = 25°C TJ = 125°C TJ = 125 C, rated VDRM applied TJ = 125oC, rated VDRM applied o Anode supply = 6V resistive load Anode supply = 6V resistive load mA VGD V mA Blocking Parameters IRRM IDRM VINS Max. peak reverse and off-state leakage current at VRRM, VDRM RMS isolation voltage 2500 (1 min) V 3500 (1 sec) dv/dt Max. critical rate of rise of off-state voltage (5) 500 V/µs shorted TJ = 130oC, linear to 0.67 VDRM, gate open circuit 50 Hz, circuit to base, all terminals 20 mA TJ = 130oC, gate open circuit IRKU/V 105 Units Conditions (5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKU105/16AS90. Thermal and Mechanical Specifications Parameters TJ www.DataSheet4U.com Tstg Junction operating temperature range Storage temperature range IRKU/V105 - 40 to 130 - 40 to 125 0.135 Units Conditions °C Per module, DC operation K/W Mounting surface flat, smooth and greased A m.


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