MW7IC915NT1

Freescale Semiconductor Technical Data Document Number: MW7IC915N Rev. 0, 9/2009 RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on - chip matching that makes it usable from 698 to 960 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Driver Application — 900 MHz Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 865 MHz 880 MHz 895 MHz Gps (dB) 37.9 38.0 37.8 PAE (%) 17.1 17.4 17.5 ACPR (dBc) - 50.4 - 50.6 - 51.3 MW7IC915NT1 728 - 960 MHz, 1.6 W AVG., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 23.5 Watts CW (3 dB Input Overdrive from Rated Pout) Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 30 to 41.5 dBm CW Pout. Typical Pout @ 1 dB Compression Point ] 15.5 Watts CW Driver Application — 700 MHz Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 50 mA, IDQ2 = 144 mA, Pout = 1.6 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 728 MHz 748 MHz www.DataSheet4U.com 768 MHz Gps (dB) 37.8 37.8 37.7 PAE (%) 17.2 17.3 17.3 ACPR (dBc) - 49.5 - 50.5 - 51.4 CASE 1894 - 0...