SEMICONDUCTOR
TECHNICAL DATA
General Description
KHB9D5N20P/F/F2
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB9D5N20P
A O C F E G B Q I K M L J D N N H P
DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O
1 2 3
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies.
FEATURES
VDSS=200V, ID=9.5A Drain-Source ON Re.