CPH6424

Ordering number : ENN7423 CPH6424 N-Channel Silicon MOSFET CPH6424 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2151A [CPH6424] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Conditions 0.7 0.9 0.2 3 0.95 0.6 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Ratings 60 ±20 3 12 1.6 150 --55 to +150 Unit V V A A W °C °C www.DataSheet4U.com Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance at Ta=25°C Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=10V ID=1.5A, VGS=4V Ratings min 60 1 ±10 1.2 2.3 3.4 110 150 145 215 2.6 typ max Unit V µA µA V S mΩ mΩ Static Drain-to-Source On-State Resistance Marking : ZA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as ...