AUIRF7739L2TR

AUTOMOTIVE GRADE Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free AUIRF7739L2TR AUIRF7739L2TR1 V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg 40V 700µΩ 1000µΩ 270A 220nC PD - 97442 Automotive DirectFET™ Power MOSFET ‚ Applicable DirectFET Outline and Substrate Outline  SB SC M2 M4 L8 DirectFET ™ ISOMETRIC L4 L6 L8 Description The AUIRF7739L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET packaging platform coupled with the latest silicon technology allows the AUIRF7739L2...