BUX77ESY

BUX77ESY BUX77HR Hi-Rel NPN bipolar transistor 80 V - 5 A Features BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range ■ ■ ■ ■ ■ 80 V 5A > 70 -65°C to +200°C 2 31 Hi-Rel NPN bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for specified level Figure 1. TO-257 Internal schematic diagram Description The BUX77HR is a silicon planar epitaxial NPN transistor in TO-257 package. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5203-016 specification. In case of conflict between this datasheet and ESCC detailed specification, the www.DataSheet4U.com latter prevails. Table 1. Device summary Package TO-257 TO-257 Lead finish Gold Solder Dip Gold Marking 520301606 520301607 BUX77ESY Type ESCC Flight Engineering model EPPL Yes Packaging Strip pack Strip pack Order codes BUX77ESYHRB BUX77ESY January 2010 Doc ID 16970 Rev 1 1/8 www.st.com 8 Electrical ratings BUX77ESY, BUX77HR 1 Electrical ratings Table 2. Symbol VCBO VCEO VEBO IC Ptot Tstg TJ Absolute maximum ratings Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Total dissipation at TC ≤ 25 °C Storage temperature Max. operating junction temperature Value 100 80 6 5 35 -65 to 200 200 Unit V V V A W °C °C Figure 2. Symbol RthJC Thermal data Parameter Thermal resistance junction...