2N5401HR

2N5401HR Datasheet Rad-Hard 150 V, 0.5 A PNP transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B E (1) DS10460 Product status link 2N5401HR Features Vceo IC(max.) 150 V 0.5 A Hermetic packages ESCC and JANS qualified Up to 100 krad(Si) low dose rate HFE at 5 V, 10 mA > 60 Tj(max.) 200 °C Description The 2N5401HR is a silicon planar PNP transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Device JANSR2N5401UBx JANS2N5401UBx 2N5401RUBx 2N5401UBx SOC5401RHRx SOC5401HRx Qualification system JANSR JANS ESCC Flight ESCC Flight ESCC Flight ESCC Flight Agency specification MIL-PRF-19500/766 MIL-PRF-19500/766 5202/014 5202/014 5202/014 5202/014 Note: See Table 8 for ordering information. Package UB UB UB UB LCC-3 LCC-3 Radiation level 100 krad - 100 krad - 100 krad - DS6656 - Rev 11 - January 2023 For further information contact your local STMicroelectronics sales office. www.st.com 2N5401HR Electrical ratings 1 Electrical ratings For PNP transistor voltage and current polarity is reversed. Table 1. Absolute maximum ratings Symbol Parameter VCBO Collector-base voltage (IE = 0) VCEO Collector-...