Chip Schottky Barrier Diodes
FM120-M H THRU FM1100-M H
Silicon epitaxial planer type
Formosa MS
0.146(3.7) 0.130(3.3) ...
Chip
Schottky Barrier Diodes
FM120-M H THRU FM1100-M H
Silicon epitaxial planer type
Formosa MS
0.146(3.7) 0.130(3.3) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
SOD-123H
0.071(1.8) 0.055(1.4)
0.035(0.9) 0.028(0.7)
0.031(0.8) Typ.
0.031(0.8) Typ.
Mechanical data
Case : Molded plastic, JEDEC SOD-123H Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.0393 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER Forward rectified current www.DataSheet4U.com Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 1.0 25 0.5 10 Rq JA CJ TSTG -55 98 120 +150
o
UNIT A A mA mA C / w pF
o
Reverse current Thermal resistance Diode junction capacitance Storage temperature
VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage
IR
C
SYMBOLS
MARKING CODE 12 13 14 15 16 18 10
V RRM
*1
V RMS
*2
VR
*3
VF
*4
Operating temperature (o C)
(V) FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH 20 30 40 50 60 80 100
(V) 14 21 28 35 42 56 70
(V) 20 30 40 50 60 80 100
(V)
0...
