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IRG4PC40KDPBF

Part Number	IRG4PC40KDPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Jan 31, 2010
Detailed Description	PD -94912 IRG4PC40KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit R...
Datasheet	IRG4PC40KDPBF PDF File

Overview

PD -94912 IRG4PC40KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.
0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ.
= 2.
1V @VGE = 15V, IC = 25A n-channel Benefits Generation 4 IGBTs offer highest efficiencies available HEXFRED...

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IRG4PC40KDPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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