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2SD523

Part Number	2SD523
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Darlington Power Transistor
Published	Jan 31, 2010
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown VCE=80V(Min.) ·High DC Current Gai...
Datasheet	2SD523 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown VCE=80V(Min.
) ·High DC Current Gain- : hFE= 1000(Min.
)@IC= 3A ·Low Collector Saturation Voltage- : VCE (sat)= 1.
5V(Max.
)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 7 A IB Base Current-Continunous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.
2 A 50 W 150 ℃ Tstg...

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