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74HC32AP Dataheets PDF



Part Number 74HC32AP
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Quad 2-Input OR Gate
Datasheet 74HC32AP Datasheet74HC32AP Datasheet (PDF)

TC74HC32AP/AF/AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC32AP,TC74HC32AF,TC74HC32AFN Quad 2-Input OR Gate The TC74HC32A is a high speed CMOS 2-INPUT OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with pr.

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TC74HC32AP/AF/AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC32AP,TC74HC32AF,TC74HC32AFN Quad 2-Input OR Gate The TC74HC32A is a high speed CMOS 2-INPUT OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Note: xxxAFN (JEDEC SOP) is not available in Japan. TC74HC32AP Features • • • • • • High speed: tpd = 6 ns (typ.) at VCC = 5 V Low power dissipation: ICC = 1 μA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) Output drive capability: 10 LSTTL loads Symmetrical output impedance: |IOH| = IOL = 4 mA (min) ∼ tpHL Balanced propagation delays: tpLH − Wide operating voltage range: VCC (opr) = 2~6 V Pin and function compatible with 74LS32 TC74HC32AF • • TC74HC32AFN Pin Assignment www.DataSheet4U.com Weight DIP14-P-300-2.54 SOP14-P-300-1.27A SOL14-P-150-1.27 : 0.96 g (typ.) : 0.18 g (typ.) : 0.12 g (typ.) IEC Logic Symbol 1 2007-10-01 TC74HC32AP/AF/AFN Truth Table A H L H L B H H L L Y H H H L Absolute Maximum Ratings (Note 1) Characteristics Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Symbol VCC VIN VOUT IIK IOK IOUT ICC PD Tstg Rating −0.5~7 −0.5~VCC + 0.5 −0.5~VCC + 0.5 ±20 ±20 ±25 ±50 500 (DIP) (Note 2)/180 (SOP) −65~150 Unit V V V mA mA mA mA mW °C Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = −40°C~65°C. From Ta = 65°C to 85°C a derating factor of −10 mW/°C shall be www.DataSheet4U.com applied until 300 mW. Operating Ranges (Note) Characteristics Supply voltage Input voltage Output voltage Operating temperature Symbol VCC VIN VOUT Topr Rating 2~6 0~VCC 0~VCC −40~85 0~1000 (VCC = 2.0 V) Input rise and fall time tr, tf 0~500 (VCC = 4.5 V) 0~400 (VCC = 6.0 V) ns Unit V V V °C Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. 2 2007-10-01 TC74HC32AP/AF/AFN Electrical Characteristics DC Characteristics Test Condition Characteristics Symbol VCC (V) 2.0 High-level input voltage VIH ⎯ 4.5 6.0 2.0 Low-level input voltage VIL ⎯ 4.5 6.0 2.0 High-level output voltage VIN = VIH or VIL IOH = −20 μA IOH = −4 mA IOH = −5.2 mA IOL = 20 μA IOL = 4 mA IOL = 5.2 mA Input leakage current Quiescent supply current IIN ICC VIN = VCC or GND VIN = VCC or GND 4.5 6.0 4.5 6.0 2.0 Low-level output voltage VIN = VIH or VIL 4.5 6.0 4.5 6.0 6.0 6.0 Min 1.50 3.15 4.20 ⎯ ⎯ ⎯ 1.9 4.4 5.9 4.18 5.68 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Ta = 25°C Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2.0 4.5 6.0 4.31 5.80 0.0 0.0 0.0 0.17 0.18 ⎯ ⎯ Max ⎯ ⎯ ⎯ 0.50 1.35 1.80 ⎯ ⎯ ⎯ ⎯ ⎯ 0.1 0.1 0.1 0.26 0.26 ±0.1 1.0 Ta = −40~85°C Min 1.50 3.15 4.20 ⎯ ⎯ ⎯ 1.9 4.4 5.9 4.13 5.63 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ 0.50 1.35 1.80 ⎯ ⎯ ⎯ ⎯ ⎯ 0.1 0.1 0.1 0.33 0.33 ±1.0 10.0 μA μA V V V V Unit VOH VOL AC Characteristics (CL = 15 pF, VCC = 5 V, Ta = 25°C, input: tr = tf = 6 ns) Characteristics Output transition time www.DataSheet4U.com Propagation delay time Symbol tTLH tTHL tpLH tpHL Test Condition ⎯ Min ⎯ Typ. 4 Max 8 Unit ns ⎯ ⎯ 6 12 ns 3 2007-10-01 TC74HC32AP/AF/AFN AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns) Test Condition Characteristics Symbol VCC (V) 2.0 ⎯ 4.5 6.0 2.0 ⎯ 4.5 6.0 ⎯ ⎯ Min ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Ta = 25°C Typ. 25 7 6 24 8 7 5 21 Max 75 15 13 75 15 13 10 ⎯ Ta = −40~85°C Min ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max 95 19 16 95 19 16 10 ⎯ pF pF ns ns Unit Output transition time tTLH tTHL tpLH tpHL CIN CPD (Note) Propagation delay time Input capacitance Power dissipation capacitance Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD・VCC・fIN + ICC/4 (per gate) www.DataSheet4U.com 4 2007-10-01 TC74HC32AP/AF/AFN Package Dimensions Weight: 0.96 g (typ.) www.DataSheet4U.com 5 2007-10-01 TC74HC32AP/AF/AFN.


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