WCMS0808U1X

S0808U1X WCMS0808U1X 32K x 8 Static RAM Features Low voltage range: — 2.7V − 3.6V Low active power and standby power Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected CMOS for optimum speed/power reducing the power consumption by over 99% when deselected. The WCMS0808U1X is available in the 450-mil-wide (300-mil body width) narrow SOIC and TSOP. An active LOW write enable signal (WE) controls the writing/reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A14). Reading the device is accomplished by selecting the device and enabling the outputs, CE and OE active LOW, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins are present on the eight data input/output pins. The input/output pins remain in a high-impedance state unless the chip is selected, outputs are enabled, and write enable (WE) is HIGH. Functional Description The WCMS0808U1X is composed of a high-performance CMOS static RAM organized as 32K words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state drivers. These devices have an automatic power-down feature, Logic Block Diagram Pin Configurations Narro...