WCMC1616V9X

ADVANCE INFORMATION WCMC1616V9X Features 1T Cell, PSRAM Architecture High speed: 70 ns Wide Voltage range: — VCC range: 2.7V to 3.3V Low active power — Typical active current: 2 mA @ f = 1 MHz — Typical active current: 13 mA @ f = fMAX Low standby power Automatic power-down when deselected Functional Description[1] The WCMC1616V9X is a high-performance CMOS pseudo static RAMs (PSRAM) organized as 1M words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life TM (MoBL® ) in portable applications such as cellular telephones. The device can be put into standby mode reducing power consumption by more than 99% when deselected using CE LOW, CE 2 HIGH or both BHE and BLE are HIGH. The input/output pins (I/O0 through I/O 1 5) are placed in a high-impedance state when: deselected (CE HIGH, CE 2 LOW OE is deasserted HIGH), or during a write operation (Chip Enabled and Write Enable WE LOW). The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling even when the chip is selected (Chip Enable CE LOW, CE 2 HIGH and both BHE and BLE are LOW). Reading from the device is accomplished by asserting the Chip Enables (CE LOW and CE 2 HIGH) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location...