WCMA1008C1X

WCMA1008C1X 128K x 8 Static RAM Features Voltage Range — 4.5V–5.5V Low active power — Typical active current: 6 mA @ f = fmax (70 ns speed) Low standby current Automatic power-down when deselected TTL-compatible inputs and outputs Easy memory expansion with CE1, CE2, and OE features CMOS for optimum speed/power (OE), and three-state drivers. This device has an automatic power-down feature that reduces power consumption by more than 75% when deselected. Writing to the device is accomplished by taking Chip Enable 1 (CE1) and Write Enable (WE) inputs LOW and Chip Enable 2 (CE2) input HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16). Reading from the device is accomplished by taking Chip Enable 1 (CE1) and Output Enable (OE) LOW while forcing Write Enable (WE) and Chip Enable 2 (CE2) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or during a write operation (CE1 LOW, CE2 HIGH, and WE LOW) The WCMA1008C1X is available in a standard 32-pin 450-mil-wide body width SOIC and 32-pin TSOP type I. Functional Description The WCMA1008C1X is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided ...