Electret Capacitor Microphone Applications
N-Channel Junction FET
RJN1163
Electret Capacitor Microphone Applications
Features
Specially suited for use in audio a...
Description
N-Channel Junction FET
RJN1163
Electret Capacitor Microphone Applications
Features
Specially suited for use in audio and telephone electret capacitor microphones Excellent voltage gain Very low noise High ESD voltage Ultra-small size package
Package Type : SOT-300
[unit:mm]
1.60±0.05 0.31±0.03 0.12±0.03
3
1.40±0.01 0.80±0.05
0~0.02
Applications
Cellular phones Portable audio PDAs MP3 players
1
0.21±0.03 0.5±0.05
2
0.21±0.03 0.5±0.05 MAX 0.34
[TOP VIEW]
[SIDE VIEW]
1. Drain
2. Source
3. Gate
Absolute Maximum Ratings at Ta = 25 oC
Parameter Gate-to-Drain Voltage Gate Current Drain Current
www.DataSheet4U.com Allowable Power Dissipation
Symbol VGDO IG ID PD Tj Tstg
Ratings -20 10 10 100 150 -55 to +150
Unit V mA mA mW
o o
Junction Temperature Storage Temperature
C C
Electrical Characteristics at Ta = 25 o C
Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol V(BR)GDO VGS(off) IDSS |yfs| Ciss Crss Conditions IG = -100µA VDS = 5V, ID = 1µA VDS = 5V, VGS = 0 VDS = 5V, VGS = 0, f = 1kHz VDS = 5V, VGS = 0, f = 1MHz VDS = 5V, VGS = 0, f = 1MHz Min -20 -0.2 70* 0.4 Ratings Typ Max -0.6 1.2 3.5 0.8 -1.5 430* Unit V V µA mS pF pF
* The RJN1163 is classified by IDSS as follows Classification A1 IDSS(µA) 70~120
A2 100~170
B 150~270
C 210~350
D 320~430
RFsemi Technologies, Inc.
Rev. 4
RJN1163
Electrical Characteristics
Parameter
o
Symbol
Condit...
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