RJN1163

N-Channel Junction FET RJN1163 Electret Capacitor Microphone Applications Features Specially suited for use in audio and telephone electret capacitor microphones Excellent voltage gain Very low noise High ESD voltage Ultra-small size package Package Type : SOT-300 [unit:mm] 1.60±0.05 0.31±0.03 0.12±0.03 3 1.40±0.01 0.80±0.05 0~0.02 Applications Cellular phones Portable audio PDAs MP3 players 1 0.21±0.03 0.5±0.05 2 0.21±0.03 0.5±0.05 MAX 0.34 [TOP VIEW] [SIDE VIEW] 1. Drain 2. Source 3. Gate Absolute Maximum Ratings at Ta = 25 oC Parameter Gate-to-Drain Voltage Gate Current Drain Current www.DataSheet4U.com Allowable Power Dissipation Symbol VGDO IG ID PD Tj Tstg Ratings -20 10 10 100 150 -55 to +150 Unit V mA mA mW o o Junction Temperature Storage Temperature C C Electrical Characteristics at Ta = 25 o C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol V(BR)GDO VGS(off) IDSS |yfs| Ciss Crss Conditions IG = -100µA VDS = 5V, ID = 1µA VDS = 5V, VGS = 0 VDS = 5V, VGS = 0, f = 1kHz VDS = 5V, VGS = 0, f = 1MHz VDS = 5V, VGS = 0, f = 1MHz Min -20 -0.2 70* 0.4 Ratings Typ Max -0.6 1.2 3.5 0.8 -1.5 430* Unit V V µA mS pF pF * The RJN1163 is classified by IDSS as follows Classification A1 IDSS(µA) 70~120 A2 100~170 B 150~270 C 210~350 D 320~430 RFsemi Technologies, Inc. Rev. 4 RJN1163 Electrical Characteristics Parameter o Symbol Condit...