SMD Type
NPN Silicon Transistor 2SC5343SF
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
Features
+0.1 2.4-...
SMD Type
NPN Silicon
Transistor 2SC5343SF
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
Features
+0.1 2.4-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
Low output capacitance:Cob=2pF(Typ.)
+0.1 1.3-0.1
Low collector saturation voltage: VCE=0.25V(Max.)
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 60 50 5 150 200 150 -55 to +150 Unit V V V mA mW
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Electrical Characteristics Ta = 25
Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE
IC=100ìA
Testconditons , IE=0
Min 60 50 5
Typ
+0.1 0.38-0.1
0-0.1
Max
Unit V V V
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Noise figure
IC=1mA , IB=0 IE=10ìA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA
0.1 0.1 70 700 0.25 80 2 3.5 10
ìA ìA
VCE(sat) IC/IB=100mA/10mA fT Cob NF VCE=10V, IC=1mA, VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, f=1KHz, Rg=10kÙ
V MHz pF dB
hFE Classification
Marking Rank hFE O 70 140 Y 120 240 DA G 200 400 L 300 700
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1
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