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MTD15N06V

Motorola

TMOS POWER FET


Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD15N06V/D Designer's TMOS V Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell...



Motorola

MTD15N06V

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