SPA11N60CFD

SPA11N60CFD CoolMOSTM Power Transistor Features New revolutionary high voltage technology Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated High peak current capability Periodic avalanche rated Qualified according to JEDEC0) for target applications Product Summary V DS R DS(on),max I D1) 600 0.44 11 V Ω A PG-TO220-3-31 Type SPA11N60CFD Package TO-220-3-31 Ordering Code SP000216317 Marking 11N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current 1) www.DataSheet4U.com Symbol Conditions ID T C=25 °C T C=100 °C I D,pulse E AS E AR I AR dv /dt dv /dt di /dt V GS I D=11 A, V DS=480 V, T j=125 °C I S=11 A, V DS=480 V, T j=125 °C static AC (f >1 Hz) T C=25 °C I D=5.5 A, V DD=50 V I D=11 A, V DD=50 V Value 11 7 28 340 0.6 11 80 40 600 ±20 ±30 33 -55 ... 150 Unit A Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive2),3) Avalanche current, repetitive2),3) Drain source voltage slope Reverse diode d v /dt Maximum diode commutation speed Gate source voltage mJ A V/ns V/ns A/µs V Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C W °C Rev. 1.2 page 1 2006-05-15 SPA11N60CFD Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 3.8 62 K/W Values typ. max...