SMG1332E

SMG1332E Elektronische Bauelemente 600mA, 20V,RDS(ON)600m£[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMG1332E provide the designer with best combination of fast swirching, low on-resistance and cost-effectiveness. S 2 A L 3 Top View SC-59 Dim A B 1 Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 B C D G H J K D Features * Simple Gate Drive * 2KV ESD Rating (Per MIL-STD-883D) * Small Package Outline H G C J K L S Drain Gate Source All Dimension in mm D G S Absolute Maximum www.DataSheet4U.com Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Ratings Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Parameter Ratings 20 ±5 600 470 2.5 1.0 0.008 Unit V V mA mA A W W / oC o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 125 Unit o C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 1 of 4 SMG1332E Elektronische Bauelemente 600mA, 20V,RDS(ON)600m£[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Dra...