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46V16M16 Dataheets PDF



Part Number 46V16M16
Manufacturers Micron Technology
Logo Micron Technology
Description MT46V16M16
Datasheet 46V16M16 Datasheet46V16M16 Datasheet (PDF)

PRELIMINARY‡ 256Mb: x4, x8, x16 DDR333 SDRAM Addendum DOUBLE DATA RATE (DDR) SDRAM FEATURES • 167 MHz Clock, 333 Mb/s/p data rate • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte) • Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-align.

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PRELIMINARY‡ 256Mb: x4, x8, x16 DDR333 SDRAM Addendum DOUBLE DATA RATE (DDR) SDRAM FEATURES • 167 MHz Clock, 333 Mb/s/p data rate • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte) • Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; centeraligned with data for WRITEs • DLL to align DQ and DQS transitions with CK • Four internal banks for concurrent operation • Data mask (DM) for masking write data (x16 has two - one per byte) • Programmable burst lengths: 2, 4, or 8 • Concurrent Auto Precharge option supported • Auto Refresh and Self Refresh Modes • FBGA package available • 2.5V I/O (SSTL_2 compatible) • tRAS lockout (tRAP = tRCD) • Backwards compatible with DDR200 and DDR266 MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks MT46V16M16 – 4 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds DDR333 COMPATIBILITY DDR333 meets or surpasses all DDR266 timing requirements thus assuring full backwards compatibility with current DDR designs. In addition, these devices support concurrent auto-precharge and tRAS lockout for improved timing performance. The 256Mb, DDR333 device will support an (tREFI) average periodic refresh interval of 7.8us. The standard 66-pin TSOP package is offered for point-to-point applications where the FBGA package is intended for the multi-drop systems. The Micron 256Mb data sheet provides full specifications and functionality unless specified herein. CONFIGURATION Architecture Configuration Refresh Count Row Addressing Bank Addressing Column Addressing 64 Meg x 4 32 Meg x 8 16 Meg x 16 16 Meg x 4 x 4 banks 8 Meg x 8 x 4 banks 4 Meg x 16 x 4 banks 8K 8K (A0–A12) 4 (BA0, BA1) 2K (A0–A9, A11) 8K 8K (A0–A12) 4 (BA0, BA1) 1K (A0–A9) 8K 8K (A0–A12) 4 (BA0, BA1) 512 (A0– A8) OPTIONS • Configuration www.DataSheet4U.com PART NUMBER 64M4 32M8 16M16 TG FJ -6 -6T -75Z none KEY TIMING PARAMETERS3 SPEED GRADE -6 -6T -75Z NOTE: CLOCK RATE CL = 21 133 MHz 133 MHz 133 MHz 167 MHz 167 MHz 133 MHz DATA-OUT ACCESS DQS-DQ SKEW +0.35ns +0.45ns +0.50ns 2.15ns 2.0ns 2.5ns ±0.70ns ±0.75ns ±0.75ns CL = 2.51 WINDOW2 WINDOW 64 Meg x 4 (16 Meg x 4 x 4 banks) 32 Meg x 8 (8 Meg x 8 x 4 banks) 16 Meg x 16 (4 Meg x 16 x 4 banks) • Plastic Package 66-Pin TSOP (OCPL) 60-Ball FBGA (16x9mm) • Timing - Cycle Time 6ns @ CL = 2.5 (DDR333B–FBGA)1 6ns @ CL = 2.5 (DDR333B–TSOP)1 7.5ns @ CL = 2 (DDR266A)2 • Self Refresh Standard 1. CL = CAS (Read) Latency 2. With a 50/50 clock duty cycle and a minimum clock rate @ CL = 2 ( -75Z) and CL = 2.5 (-6, -6T). 3. -75, -8 are also available; see base data sheet. NOTE: 1. Supports PC2700 modules with 2.5-3-3 timing 2. Supports PC2100 modules with 2-3-3 timing .


F16JZ51 46V16M16 W7MG1M32SVx-BN


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