BTA12-800BW3G

BTA12-600BW3G, BTA12-800BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full−wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800 V On-State Current Rating of 12 A RMS at 25°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt − 2000 V/ms minimum at 125°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating dI/dt − 2.5 A/ms minimum at 125°C Internally Isolated (2500 VRMS) These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTA12−600BW3G BTA12−800BW3G VDRM, VRRM 600 800 V On-State RMS Current IT(RMS) (Full Cycle Sine Wave, 60 Hz, TC = 80°C) 12 A Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 8.3 ms) ITSM I2t 105 A 46 A2sec Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 10ms) VDSM/ VRSM VDSM/VRSM +100 V Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 A Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) PGM 20 W Average Gate Power (TJ = 125°C) PG(AV) 1.0 W Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C) Viso ...