Surface Mount P-Channel MOSFET
WTK9435
Surface Mount P-Channel Enhancement Mode MOSFET
D
P b Lead(Pb)-Free
DRAIN CURRENT -5.3 AMPERES DRAIN SOURCE VO...
Description
WTK9435
Surface Mount P-Channel Enhancement Mode MOSFET
D
P b Lead(Pb)-Free
DRAIN CURRENT -5.3 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE
1 3
S S
8 7
D
2
D
6
S
Features:
D
G
4
5
* Super high dense * Cell design for low RDS(ON) * RDS(ON)<55mΩ@VGS = -10V * RDS(ON)<90mΩ@VGS = -4.5V * Simple Drive Requirement * Lower On-resistance * Fast Switching
1
Description:
The WTK9435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
SOP-8
Maximum Ratings (TA=25˚C Unless Otherwise Specified)
Rating
www.DataSheet4U.com Drain-Source Voltage
Symbol VDS VGS (TA =25°C) (TA =70°C) ID IDM (TA =25°C) PD R θJA TJ Tstg
Value -30 ±16 -5.3 -4.7 -20 2.5 50 +150 -55 to +150
Unite V V A A W °C/W °C °C
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (1) Power Dissipation
Maximax Junction-to-Ambient Operating Junction Temperature Range Storage Temperature Range
Device Marking
WTK9435=9435SC
http://www.weitron.com.tw
WEITRON
1/6
03-May-07
WTK9435
Electrical Characteristics Static
Characteristic (TA =25°C U nless otherwise noted) Symbol
V(BR)DSS VGS (th) IGSS IDSS
Min
-30 -1.0 -
Typ
-
Max
-3.0 ±100 -1 -5
55 90
Unit
V V nA μA
Drain-Source Breakdown Voltage VGS=0V, ID=-250 uA Gate-Source Threshold Voltage VDS=VGS, ...
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