WTK9410

WTK9410 Surface Mount N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE D 1 3 S S S G 8 7 D 2 4 D D 6 5 Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON) RDS(ON)<5.5mΩ@VGS=10V RDS(ON)<6.2mΩ@VGS=4.5V RDS(ON)<8.0mΩ@VGS=2.5V * Rugged and Reliable. * SOP-8 Package. 1 SOP-8 Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Continuous Drain Symbol VDS VGS ID IDM PD RθJA TJ Tstg Value 30 ±12 18 15 80 2.5 50 +150 -55 to +150 Unite V V A A W °C/W °C °C Current(1) (TA =25°C) (TA =70°C) Pulsed Drain Current(2) Power Dissipation(TA =25°C) Maximax Junction-to-Ambient(1) Junction Temperature Range Storage Temperature Range Device Marking WTK9410 = 9410SC http://www.weitron.com.tw WEITRON 1/6 12-Mar-07 WTK9410 Electrical Characteristics (TA=25°C Unless otherwise noted) Static (2) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS=0V, ID=250µA Gate-Source Threshold Voltage VDS=VGS, ID=250µA Gate-Source Leakage Current VDS=0V, VGS=±12V Drain-Source Leakage Current @Tj=25C, VDS=30V,VGS=0V @Tj=70C, VDS=24V,VGS=0V Drain-Source On-Resistance3 VGS=10V, ID=18A VGS=4.5V, ID=12A VGS=2.5V, ID=6A Forward Transconductance VDS=10V, ID=12A V(BR)DSS VGS(th) IGSS 30 - - 1.2 V V - - ±100 nA IDSS - - 1 25 µA rDS(on) - - 5.5 6.2 8.0 - mΩ gfs - 4...