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2SD2642

Part Number	2SD2642
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Darlington Power Transistor
Published	Jan 20, 2010
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·Hi...
Datasheet	2SD2642 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·High DC Current Gain- : hFE= 5000( Min.
) @(IC= 5A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.
5V(Max)@ (IC= 5A, IB= 5mA) ·Complement to Type 2SB1687 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio, series regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous ...

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