PE42510A

Product Specification PE42510A Product Description The following specification defines an SPDT (single pole double throw) switch for use in cellular and other wireless applications. The PE42510A uses Peregrine’s UltraCMOS™ process and it also features HaRP™ technology enhancements to deliver high linearity and exceptional harmonics performance. HaRP™ technology is an innovative feature of the UltraCMOS™ process providing upgraded linearity performance. The PE42510A is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 1. Functional Diagram RFC SPDT High Power UltraCMOS™ RF Switch 30 - 2000 MHz Features No blocking capacitors required 50 Watt P1dB compression point 10 Watts <8:1 VSWR (Normal Operation) 29 dB Isolation @800 MHz < 0.3 dB Insertion Loss at 800 MHz 2fo and 3fo < -84 dBc @ 42.5 dBm ESD rugged to 2.0 kV HBM 32-lead 5x5 mm QFN package Figure 2. Package Type 32-lead 5x5 mm QFN RF1 RF2 CMOS Control Driver and ESD CTRL www.DataSheet4U.com Table 1. Electrical Specifications @ 25 °C, VDD = 3.3 V (ZS = ZL = 50 Ω) unless otherwise noted Parameter RF Insertion Loss 0.1 dB Input Compression Point Isolation (Supply Biased): RF to RFC Unbiased Isolation: RF - RFC, VDD, V1=0 V RF (Active Port) Return Loss 2nd Harmonic 3rd Harmonic Switching Time Lifetime switch cycles 800 MHz @ +...