HMC758LP3E

HMC758LP3 / 758LP3E v00.1108 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz Features Noise Figure: 1.7 dB Gain: 22 dB Output IP3: +37 dBm Single Supply: +3V to +5V 50 Ohm Matched Input/Output 16 Lead 3x3 mm SMT Package: 9 mm2 8 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC758LP3(E) is ideal for: Cellular Infrastructure, WiMAX & LTE/4G Software Defined Radios Repeaters and Femtocells Access Points Test & Measurement Equipment Functional Diagram General Description The HMC758LP3(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for Cellular Infrastructure, WiMAX & LTE/4G basestation front-end receivers operating between 700 and 2200 MHz. The amplifier has been optimized to provide 1.7 dB noise figure, 21 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC758LP3(E) can be biased with +3V to +5V and features an externally adjustable supply current, which allows the designer to tailor the linearity performance of the LNA for each application. www.DataSheet4U.com Electrical Specifi cations, TA = +25° C, R1= 390Ω, R2= 560Ω* Vdd = +3V Parameter Min. Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) 80 16 19 Typ. 700 - 1700 21.8 0.005 1.6 15 11 18 ...