Document
HMC757
v00.0409
GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz
Typical Applications
The HMC757 is ideal for: • Point-to-Point Radios
Features
Saturated Output Power: +30 dBm @ 30% PAE High Output IP3: +37 dBm High Gain: 22 dB DC Supply: +7V @ 395 mA 50 Ohm Matched Input/Output Die Size: 2.4 x 0.9 x 0.1 mm
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LINEAR & POWER AMPLIFIERS - CHIP
• Point-to-Multi-Point Radios • VSAT • Military & Space
Functional Diagram
General Description
The HMC757 is a three stage GaAs pHEMT MMIC 1/2 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC757 provides 22 dB of gain, and +30 dBm of saturated output power at 30% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-ChipModules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils).
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Electrical Specifi cations, TA = +25° C, Vdd = +7V, Idd = 395 mA[1]
Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept Total Supply Current (Idd) [1] Adjust Vgg between -2 to 0V to achieve Idd= 395 mA typical. [2] Measurement taken at +7V @ 395 mA, Pout / Tone = +17 dBm (IP3)[2] 27 19 Min. Typ. 16 - 20 22 0.028 10 15 29 30 38 395 27 21 Max. Min. Typ. 20 - 24 24 0.032 12 13 29.5 30 36 395 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC757
v00.0409
GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz
Broadband Gain & Return Loss vs. Frequency
30 20 RESPONSE (dB) 26 GAIN (dB) 10 0 -10 18 -20 -30 12 14 16 18 20 22 FREQUENCY (GHz) 24 26 28 14 16 18 20 FREQUENCY (GHz) 22 24
S21 S11 S22
Gain vs. Temperature
30
3
+25C +85C -55C
22
Input Return Loss vs. Temperature
0
+25C +85C -55C
Output Return Loss vs. Temperature
0 -4 RETURN LOSS (dB) -8 -12 -16 -20 -24
+25C +85C -55C
-4 RETURN LOSS (dB)
-8
-12
-16
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-20
18
20 FREQUENCY (GHz)
22
24
16
18
20 FREQUENCY (GHz)
22
24
P1dB vs. Temperature
33
Psat vs. Temperature
35
31 P1dB (dBm) Psat (dBm)
33
29
31
27
+25C +85C -55C
29
+25C +85C -55C
25
27
23 16 18 20 FREQUENCY (GHz) 22 24
25 16 18 20 FREQUENCY (GHz) 22 24
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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LINEAR & POWER AMPLIFIERS - CHIP
HMC757
v00.0409
GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz
P1dB vs. Current
33
Psat vs. Current
33
31 P1dB (dBm) Psat (dBm)
360mA 395mA 420mA
31
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LINEAR & POWER AMPLIFIERS - CHIP
29
29
27
27
360mA 395mA 420mA
25
25
23 16 18 20 FREQUENCY (GHz) 22 24
23 16 18 20 FREQUENCY (GHz) 22 24
Output IP3 vs. Temperature, Pout/Tone = +17 dBm
45
Output IP3 vs. Supply Current, Pout/Tone = +17 dBm
45
40 IP3 (dBm) IP3 (dBm)
+25C +85C -55C
40
35
35
30
30
360mA 395mA 420mA
www.DataSheet4U.com 16
25
25 18 20 FREQUENCY (GHz) 22 24 16 18 20 FREQUENCY (GHz) 22 24
Output IP3 vs. Supply Voltage, Pout/Tone = +17 dBm
45
Output IM3
80 70
40 IP3 (dBm) IM3(dBc)
60 50 40 30
16GHz 18GHz 20GHz 22GHz 24GHz
35
6.5V 7.0V 7.5V
30
20 10
25 16 18 20 FREQUENCY (GHz) 22 24
0 5 7 9 11 13 15 17 19 21 23 Pout/TONE (dBm)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC757
v00.0409
GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz
Power Compression @ 20 GHz
35 Pout (dBm), GAIN (dB), PAE (%) 30 25 20 15 10 5 0 -18
Pout Gain PAE
Reverse Isolation vs. Temperature
0 REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60
+25C +85C -55C
3
LINEAR & POWER AMPLIFIERS - CHIP
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-13
-8
-3
2
7
12
14
16
18
20
22
24
26
INPUT POWER (dBm)
FREQUENCY (GHz)
Gain & Power vs. Supply Current @ 20 GHz
35 Gain(dB), P1dB(dBm), Psat(dBm)
Gain & Power vs. Supply Voltage @ 20 GHz
35 Gain(dB), P1dB(dBm), Psat(dBm)
30
30
25
25
20
Gain (dB) P1dB (dBm) Psat (dBm)
20
Gain (dB) P1dB (dBm) Psat (dBm)
15
15
www.DataSheet4U.com 360
10
370
380
390 Idd (V)
400
410
420
10 5.5
6
6.5 Vdd (V)
7
7.5
Power Dissipation
3 POWER DISSIPATION (W)
2.8
2.6
2.4
2.2
16GHz 18GHz 20GHz 22GHz 24GHz
2 -18
-14
-10
-6
-2
2
6
10
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC757
v00.0409
GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) RF Inp.