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HMC757 Dataheets PDF



Part Number HMC757
Manufacturers Hittite Microwave Corporation
Logo Hittite Microwave Corporation
Description GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER
Datasheet HMC757 DatasheetHMC757 Datasheet (PDF)

HMC757 v00.0409 GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz Typical Applications The HMC757 is ideal for: • Point-to-Point Radios Features Saturated Output Power: +30 dBm @ 30% PAE High Output IP3: +37 dBm High Gain: 22 dB DC Supply: +7V @ 395 mA 50 Ohm Matched Input/Output Die Size: 2.4 x 0.9 x 0.1 mm 3 LINEAR & POWER AMPLIFIERS - CHIP • Point-to-Multi-Point Radios • VSAT • Military & Space Functional Diagram General Description The HMC757 is a three stage GaAs pHEMT MMIC 1/2 W.

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HMC757 v00.0409 GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz Typical Applications The HMC757 is ideal for: • Point-to-Point Radios Features Saturated Output Power: +30 dBm @ 30% PAE High Output IP3: +37 dBm High Gain: 22 dB DC Supply: +7V @ 395 mA 50 Ohm Matched Input/Output Die Size: 2.4 x 0.9 x 0.1 mm 3 LINEAR & POWER AMPLIFIERS - CHIP • Point-to-Multi-Point Radios • VSAT • Military & Space Functional Diagram General Description The HMC757 is a three stage GaAs pHEMT MMIC 1/2 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC757 provides 22 dB of gain, and +30 dBm of saturated output power at 30% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-ChipModules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils). www.DataSheet4U.com Electrical Specifi cations, TA = +25° C, Vdd = +7V, Idd = 395 mA[1] Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept Total Supply Current (Idd) [1] Adjust Vgg between -2 to 0V to achieve Idd= 395 mA typical. [2] Measurement taken at +7V @ 395 mA, Pout / Tone = +17 dBm (IP3)[2] 27 19 Min. Typ. 16 - 20 22 0.028 10 15 29 30 38 395 27 21 Max. Min. Typ. 20 - 24 24 0.032 12 13 29.5 30 36 395 Max. Units GHz dB dB/ °C dB dB dBm dBm dBm mA 3 - 134 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC757 v00.0409 GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz Broadband Gain & Return Loss vs. Frequency 30 20 RESPONSE (dB) 26 GAIN (dB) 10 0 -10 18 -20 -30 12 14 16 18 20 22 FREQUENCY (GHz) 24 26 28 14 16 18 20 FREQUENCY (GHz) 22 24 S21 S11 S22 Gain vs. Temperature 30 3 +25C +85C -55C 22 Input Return Loss vs. Temperature 0 +25C +85C -55C Output Return Loss vs. Temperature 0 -4 RETURN LOSS (dB) -8 -12 -16 -20 -24 +25C +85C -55C -4 RETURN LOSS (dB) -8 -12 -16 www.DataSheet4U.com 16 -20 18 20 FREQUENCY (GHz) 22 24 16 18 20 FREQUENCY (GHz) 22 24 P1dB vs. Temperature 33 Psat vs. Temperature 35 31 P1dB (dBm) Psat (dBm) 33 29 31 27 +25C +85C -55C 29 +25C +85C -55C 25 27 23 16 18 20 FREQUENCY (GHz) 22 24 25 16 18 20 FREQUENCY (GHz) 22 24 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 135 LINEAR & POWER AMPLIFIERS - CHIP HMC757 v00.0409 GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz P1dB vs. Current 33 Psat vs. Current 33 31 P1dB (dBm) Psat (dBm) 360mA 395mA 420mA 31 3 LINEAR & POWER AMPLIFIERS - CHIP 29 29 27 27 360mA 395mA 420mA 25 25 23 16 18 20 FREQUENCY (GHz) 22 24 23 16 18 20 FREQUENCY (GHz) 22 24 Output IP3 vs. Temperature, Pout/Tone = +17 dBm 45 Output IP3 vs. Supply Current, Pout/Tone = +17 dBm 45 40 IP3 (dBm) IP3 (dBm) +25C +85C -55C 40 35 35 30 30 360mA 395mA 420mA www.DataSheet4U.com 16 25 25 18 20 FREQUENCY (GHz) 22 24 16 18 20 FREQUENCY (GHz) 22 24 Output IP3 vs. Supply Voltage, Pout/Tone = +17 dBm 45 Output IM3 80 70 40 IP3 (dBm) IM3(dBc) 60 50 40 30 16GHz 18GHz 20GHz 22GHz 24GHz 35 6.5V 7.0V 7.5V 30 20 10 25 16 18 20 FREQUENCY (GHz) 22 24 0 5 7 9 11 13 15 17 19 21 23 Pout/TONE (dBm) 3 - 136 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC757 v00.0409 GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz Power Compression @ 20 GHz 35 Pout (dBm), GAIN (dB), PAE (%) 30 25 20 15 10 5 0 -18 Pout Gain PAE Reverse Isolation vs. Temperature 0 REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60 +25C +85C -55C 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 137 -13 -8 -3 2 7 12 14 16 18 20 22 24 26 INPUT POWER (dBm) FREQUENCY (GHz) Gain & Power vs. Supply Current @ 20 GHz 35 Gain(dB), P1dB(dBm), Psat(dBm) Gain & Power vs. Supply Voltage @ 20 GHz 35 Gain(dB), P1dB(dBm), Psat(dBm) 30 30 25 25 20 Gain (dB) P1dB (dBm) Psat (dBm) 20 Gain (dB) P1dB (dBm) Psat (dBm) 15 15 www.DataSheet4U.com 360 10 370 380 390 Idd (V) 400 410 420 10 5.5 6 6.5 Vdd (V) 7 7.5 Power Dissipation 3 POWER DISSIPATION (W) 2.8 2.6 2.4 2.2 16GHz 18GHz 20GHz 22GHz 24GHz 2 -18 -14 -10 -6 -2 2 6 10 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC757 v00.0409 GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Inp.


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