isc Silicon NPN Power Transistors
TIP53
DESCRIPTION ·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustai...
isc Silicon
NPN Power
Transistors
TIP53
DESCRIPTION ·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 350V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for line operated audio output amplifier,and switching
power supply drivers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
450
V
VCEO Collector-Emitter Voltage
350
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3.0
A
ICM
Collector Current-Peak
5.0
A
IB
Base Current
PD
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
0.6
A
100
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.25 ℃/W
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 10V
ICBO
Collector Cutoff Current
VCB= 450V; IE= 0
ICEO
Collector Cutoff Current
VCE= 250V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.3A; VCE= 10V
hFE-2
DC Current Gain
IC= 3A; VCE= 10V
fT
Current-Gain—B...