BUZ903

MAGNA TEC 25.0 +0.1 -0.15 BUZ902 BUZ903 MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET 8.7 Max. 1.50 Typ. 11.60 ± 0.3 10.90 ± 0.1 POWER MOSFETS FOR AUDIO APPLICATIONS 30.2 ± 0.15 Ø 20 M ax. 39.0 ± 1.1 16.9 ± 0.15 1 2 Ø 1.0 FEATURES HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATING R 4.0 ± 0.1 R 4.4 ± 0.2 ENHANCEMENT MODE INTEGRAL PROTECTION DIODES COMPLIMENTARY P–CHANNEL BUZ907 & BUZ908 Case – Source TO–3 Pin 1 – Gate www.DataSheet4U.com Pin 2 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ902 220V ±14V 8A 8A 125W –55 to 150°C 150°C 1°C/W BUZ903 250V Magnatec. Telephone (01455) 554711. Fax (01455) 558843. Prelim. 01/97 MAGNA TEC Characteristic BVDSX BVGSS VGS(OFF) VDS(SAT)* RDS(on)* BUZ902 BUZ903 STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Test Conditions BUZ902 BUZ903 IG = ±100µA ID = 100mA ID = 8A ID = 8A VDS = 220V IDSX Drain – Source Cut–Off Current VGS = -10V BUZ902 VDS = 250V BUZ903 yfs* Forward Transfer Admittance VDS = 10V ID = 3A 0.7 2 S 10 mA ID = 10mA Gate – Source Breakdown Voltage VDS = 0 Gate – Source Cut–Off Voltage Drain – Source Saturation Voltage Static – Sourc...