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TPC8013-H

Part Number	TPC8013-H
Manufacturer	Toshiba Semiconductor
Description	Field Effect Transistor
Published	Jan 17, 2010
Detailed Description	TPC8013-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8013-H High Speed and Hi...
Datasheet	TPC8013-H PDF File

Overview

TPC8013-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8013-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications · · · · · · · Small footprint due to small and thin package High speed switching Small gate charge: Qg = 48 nc (typ.
) Low drain-source ON resistance: RDS (ON) = 5.
4 mΩ (typ.
) High forward transfer admittance: |Yfs| = 25 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement-mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Puls...

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TPC8013-H Field Effect Transistor - Toshiba Semiconductor

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