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TPC8012-H
Field Effect Transistor
Description
TPC8012-H TOSHIBA Field Effect
Transistor
Silicon N Channel MOS Type (F-MOSV) TPC8012-H Switching
Regulator
Application DC-DC Converters Unit: mm · · · · Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) High forward transfer admittance: |Yfs| = 1.35 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 200 V) Enhancement mode: Vth = 3.0 to 5.0 ...
Toshiba Semiconductor
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TPC8012-H
Field Effect Transistor
- Toshiba Semiconductor
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