2SK3582TV
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3582TV
For ECM
• Application for Ultra-com...
2SK3582TV
TOSHIBA Field Effect
Transistor Silicon N Channel Junction Type
2SK3582TV
For ECM
Application for Ultra-compact ECM
0.2±0.05 1.2±0.05 0.3±0.05 3 0.8±0.05
Unit: mm
1.2±0.05
0.8±0.1
Absolute Maximum Ratings (Ta=25°C)
Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA mW °C °C
0.4
1 2
0.4
0.28±0.02
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
VESM2 JEDEC JEITA TOSHIBA
1.Drain 2.Source 3.Gate
2-1H1A
Weight: 0.8mg (typ.)
IDSS CLASSIFICATION A-Rank 80 to 200 µA B-Rank 170 to 300µA
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Marking
Equivalent Circuit Type Name Top Gate Lot Code IDSS Classification Symbol A :A-Rank B :B-Rank
D
5 □
G
S
Precaution
There is a metal plate on the top of package, which has the same electrical potential as the Gate terminal. Don’t use it as a terminal.
1
200...