2SK3582TV

2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Application for Ultra-compact ECM 0.2±0.05 1.2±0.05 0.3±0.05 3 0.8±0.05 Unit: mm 1.2±0.05 0.8±0.1 Absolute Maximum Ratings (Ta=25°C) Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA mW °C °C 0.4 1 2 0.4 0.28±0.02 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). VESM2 JEDEC JEITA TOSHIBA 1.Drain 2.Source 3.Gate 2-1H1A Weight: 0.8mg (typ.) IDSS CLASSIFICATION A-Rank 80 to 200 µA B-Rank 170 to 300µA www.DataSheet4U.com Marking Equivalent Circuit Type Name Top Gate Lot Code IDSS Classification Symbol A :A-Rank B :B-Rank D 5 □ G S Precaution There is a metal plate on the top of package, which has the same electrical potential as the Gate terminal. Don’t use it as a terminal. 1 200...