MMDT1N434
NPN Silicon Epitaxial Planar Transistor
for switching and interface circuit and drive circuit applications
Col...
MMDT1N434
NPN Silicon Epitaxial Planar
Transistor
for switching and interface circuit and drive circuit applications
Collector (Output) Base (Input) R1 R2 Emitter (Common)
Features With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC Ptot Tj TS
Value 50 50 6 100 200 150 - 55 to + 150
Unit V V V mA mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter DC Current Gain at VCE = 5 V, IC = 5 mA www.DataSheet4U.com Collector Base Cutoff Current at VCB = 50 V Collector Emitter Breakdown Voltage at IC = 100 µA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA Input On Voltage at VCE = 0.2 V, IC = 5 mA Input Off Voltage at VCE = 5 V, IC = 100 µA Input Resistor Input Resistor Resistance Ratio Transition Frequency at VCE = 10 V, -IE = 5 mA, f = 100 MHz Symbol hFE ICBO V(BR)CEO VCE(sat) VI(on) VI(off) R1 R2 R 2 / R1 fT Min. 50 50 0.5 3.29 15.4 3.6 Typ. 4.7 22 4.5 250 Max. 0.1 0.3 1.7 6.11 28.6 5.5 Unit µA V V V V KΩ KΩ MHz
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 14/01/2008
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