PBSS304NX
60 V, 4.7 A NPN low VCEsat (BISS) transistor
Rev. 02 — 20 November 2009 Product data sheet
1. Product profile...
PBSS304NX
60 V, 4.7 A
NPN low VCEsat (BISS)
transistor
Rev. 02 — 20 November 2009 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS)
transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS304PX.
1.2 Features
Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors
1.3 Applications
High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications
1.4 Quick reference data
www.DataSheet4U.com
Table 1. Symbol VCEO IC ICM RCEsat
[1]
Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 4 A; IB = 200 mA
[1]
Conditions open base
Min -
Typ 37
Max 60 4.7 9.4 53
Unit V A A mΩ
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
NXP Semiconductors
PBSS304NX
60 V, 4.7 A
NPN low VCEsat (BISS)
transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description emitter collector base
3 2 1
3 1
sym042
Simplified outline
Symbol
2
3. Ordering information
Table 3. Ordering information Package Name PBSS304NX SC-62 Description plas...