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T16T Dataheets PDF



Part Number T16T
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description logic level and standard 16A Triacs
Datasheet T16T DatasheetT16T Datasheet (PDF)

T16T Snubberless™, logic level and standard 16 A Triacs A2 G A1 A1 A2 G TO-220AB insulated (T16xxT-6I) Features • Medium current Triac • High static and dynamic commutation • Low thermal resistance with clip bonding • Packages is RoHS (2002/95/EC) compliant • 600 V VRM • UL certified (ref. file E81734) Applications • Value sensitive application • General purpose ac line load switching • Motor control circuits in power tools • Small home appliances, lighting • Inrush current limiting circuits •.

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T16T Snubberless™, logic level and standard 16 A Triacs A2 G A1 A1 A2 G TO-220AB insulated (T16xxT-6I) Features • Medium current Triac • High static and dynamic commutation • Low thermal resistance with clip bonding • Packages is RoHS (2002/95/EC) compliant • 600 V VRM • UL certified (ref. file E81734) Applications • Value sensitive application • General purpose ac line load switching • Motor control circuits in power tools • Small home appliances, lighting • Inrush current limiting circuits • Overvoltage crowbar protection Datasheet - production data Description Available in through-hole, the T16T series of Triacs can be used as on/off or phase angle control function in general purpose ac switching where high commutation capability is required. This series can be designed-in in many value sensitive appliances thanks to the parameters guidance provided in the following pages. Provides insulation rated at 2500 V rms (TO-220AB insulated package). Table 1. Device summary Order code Symbol Value T1610T-6I T1620T-6I T1635T-6I IGT 3Q logic level IGT 3Q Snubberless 10 mA 20 / 35 mA TM: Snubberless is a trademark of STMicroelectronics June 2014 This is information on a product in full production. DocID16488 Rev 3 1/9 www.st.com Characteristics T16T 1 Characteristics Table 2. Absolute maximum ratings (limiting values; Tj = 25 °C, unless otherwise specified) Symbol Parameter Value Unit IT(RMS) On-state rms current (full sine wave) ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I²t I²t Value for fusing dI/dt VDSM / VRSM IGM PG(AV) Tstg Tj Critical rate of rise of on-state current IG = 2 x IGT tr ≤ 100 ns Non repetitive surge peak off-state voltage Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range F = 50 Hz F = 60 Hz tp = 10 ms F = 60 Hz tp = 10 ms tp = 20 µs Tc = 86 °C 16 A tp = 20 ms 120 A tp = 16.7 ms 126 105 A²s Tj = 125 °C 50 A/µs Tj = 25 °C VDRM/VRRM + 100 V Tj = 125 °C 4 A Tj = 125 °C 1 W - 40 to + 150 °C - 40 to + 125 °C 2/9 DocID16488 Rev 3 T16T Characteristics Symbol Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Test conditions Quadrant T16xxT Unit T1610T T1620T T1635T IGT (1) VD = 12 V RL = 30 W VGT VGD IH (2) VD = VDRM, RL = 3.3 kW, Tj = 25 °C VD = VDRM, RL = 3.3 kW, Tj = 125 °C IT = 500 mA IL IG = 1.2 IGT dV/dt (2) VD = 67% VDRM, gate open (dV/dt)c = 0.1 V/µs (dV/dt)c = 10 V/µs Without snubber (di/dt)c (2) (dV/dt)c = 0.1 V/µs (dV/dt)c = 10 V/µs Without snubber I - II - III 10 20 35 MAX. mA IV ALL MAX. 1.3 V ALL MIN. 0.2 V MAX. 12 25 40 mA I - III 20 35 50 IV MAX. mA II 30 40 80 Tj = 125 °C Tj = 150 °C(3) 100 1000 2000 MIN. V/µs 20 500 1000 8 Tj = 125 °C 4 MIN. 3 Tj = 150 °C(3) 1 6 16 A/ms 3 12 1. minimum IGT is guaranted at 5% of IGT max. 2. for both polarities of A2 referenced to A1. 3. derating information for excess temperature above Tj max. Table 4. Static characteristics Symbol Test conditions VT (1) VTO (1) RD (1) ITM = 22.6 A, tp = 380 µs Threshold voltage Dynamic resistance IDRM IRRM VDRM = VRRM VD = 0.9 x VDRM Tj = 25 °C Tj = 125 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 150 °C(2) 1. for both polarities of A2 referenced to A1. 2. derating information for excess temperature above Tj max. MAX. MAX. MAX. MAX. TYP. Value Unit 1.55 V 0.85 V 30 mΩ 5 µA 1 mA 1.9 DocID16488 Rev 3 3/9 9 Characteristics T16T Symbol Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient (DC) Table 5. Thermal resistance Parameter Value 2.1 60 Unit °C/W °C/W Figure 1. Maximum power dissipation versus rms on-state current (full cycle) 20 P(W) 18 α = 180° 180° 16 14 12 10 8 6 4 2 IT(RMS)(A) 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Figure 2. On-state rms current versus case temperature (full cycle) IT(RMS)(A) 16 14 12 10 8 6 4 2 0 0 25 TO-220 ins. α = 180° TC(°C) 50 75 100 125 Figure 3. On-state rms current versus ambient temperature 3.5 IT(RMS)(A) 3.0 α = 180° 2.5 2.0 TO-220 ins. 1.5 1.0 0.5 0.0 0 Ta(°C) 25 50 75 100 125 Figure 4. Relative variation of thermal impedance versus pulse duration 1.0E+00 K = [Zth / Rth] Zth(j-c) TO-220AB Zth(j-a) 1.0E-01 TO-220AB 1.0E-02 Tp(s) 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 5. On state characteristics (maximum values) 1000 ITM(A) 100 10 Tj = 125 °C Tj = 25 °C 1 VTM(V) 0 1 2 Tjmax: Vto = 0.85 V Rd = 25 mW 3 4 Figure 6. Surge peak on state current versus number of cycles ITMS(A) 120 100 Non repetitive Tj initial = 25 °C 80 60 Repetitive 40 Tc = 86 °C 20 TO-220AB ins. 0 1 10 t = 20 ms One cycle Number of cycles 100 1000 4/9 DocID16488 Rev 3 T16T Characteristics Figure 7. Non repetitive surge peak on state Figure 8. Relative v.


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