APT35GA90B

APT35GA90B APT35GA90S 900V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT35GA90B poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. ® APT35GA90S D3PAK Single die IGBT FEATURES Fast switching with low EMI Very Low Eoff for maximum efficiency Ultra low Cres for improved noise immunity Low conduction loss Low gate charge Increased intrinsic gate resistance for low EMI RoHS compliant TYPICAL APPLICATIONS ZVS phase shifted and other full bridge Half bridge High power PFC boost Welding UPS, solar, and other inverters High frequency, high efficiency industrial Absolute Maximum Ratings Symbol Vces IC1 IC2 ICM VGE Parameter Collector Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current Gate-Emitter Voltage 2 1 Ratings 900 63 35 105 ±30 290 105A @ 900V -55 to 150 300 Unit V A V W PD Total Power Dissipation @ TC = 25°C www.DataSheet4U.com SSOA Switching Safe Operating Area @ TJ = 150°C T...