Power Transistors 8.0 Amp NPN - High Voltage Transistor Chip
Description
PROCESS
CP289
Power Transistors
8.0 Amp NPN - High Voltage Transistor Chip
PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization 167 x 167 MILS 9.5 MILS 59 x 29 MILS 64 x 28 MILS Al - 45,000Å Ti/Ni/Ag - 3,000Å, 10,000Å, 10,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 558 PRINCIPAL D...
